[15a-D311-1~12] 6.3 Oxide electronics

[15a-D311-3] Origin of the Ultra-Sharp Gate Modulation in VO₂ Mott Transistors

〇Takeaki Yajima¹, Tomonori Nishimura¹, Takahisa Tanaka¹, Ken Uchida¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Keywords:electrostatic effect, metal-insulator transition, Joule heat

Ultra-sharp ON/OFF switching was experimentally demonstrated in the VO₂-channel Mott transistor, where the VO₂ metal-insulator transition was induced by the application of the gate voltage. The device simulation showed a unique mechanism to the three-terminal devices, namely, the gate voltage induces transition by electrostatic electron accumulation while the drain voltage generates Joule heat acceleratedly as the transition evolves.