10:00 〜 10:15
▼ [15a-D419-5] Low-Temperature Crystallization of Ferroelectric Lead Zirconium Titanate (PZT) Thin-Films using Solution-Combustion Synthesis Method
キーワード：PZT Ferroelectric thin-films, Low Temperature, Solution-Combustion Synthesis
Lead Zirconium Titanate (PZT) thin-films have achieved much attention for its superior piezoelectric and ferroelectric properties. However, high temperature environment of obtaining device-quality PZT thin-films which is incompatible with the standard Si-based CMOS process has been a big problem for a long time.
In this study, to obtain PZT thin-films, a unique method called solution-combustion synthesis (SCS) of utilizing self-energy generating solution combustion reaction with a pair of oxidizer and fuel in the PZT precursor solution was used. XRD patterns show pure perovskite phase with random crystalline orientation. Typical P-E hysteresis loops were observed with a remnant polarization Pr of ~15.97 µC/cm2 at an applied voltage of 15 V, indicating ferroelectric nature of the fabricated PZT thin-film. The result confirms that the SCS method enables the crystallization of PZT thin-film at a temperature as low as 450 ℃.
In this study, to obtain PZT thin-films, a unique method called solution-combustion synthesis (SCS) of utilizing self-energy generating solution combustion reaction with a pair of oxidizer and fuel in the PZT precursor solution was used. XRD patterns show pure perovskite phase with random crystalline orientation. Typical P-E hysteresis loops were observed with a remnant polarization Pr of ~15.97 µC/cm2 at an applied voltage of 15 V, indicating ferroelectric nature of the fabricated PZT thin-film. The result confirms that the SCS method enables the crystallization of PZT thin-film at a temperature as low as 450 ℃.