10:15 〜 10:30
▼ [15a-D419-6] Fabrication of Pure-Perovskite-Phase Sm-Doped Pb(Mg1/3Nb2/3)O3-PbTiO3 Epitaxial Thin Film on Si by Magnetron Sputter using Powder Target
キーワード：Sm doped PMN-PT, PZT-based seed layer, Separate deposition
A single crystal of Sm-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (Sm-PMN-PT) exhibited a world-leading high d33 value. Its monocrystalline thin film is also expected to provide a giant piezoelectricity, and thus to have a potential to break the performance limitation of Pb(Zr,Ti)O3 (PZT)-based MEMS. However, the epitaxial growth of such a PMN-PT-based thin film with a thickness of a few micrometers for MEMS is generally uneasy due to the thermodynamics instability.
In this study, we succeeded the reproducible sputter epitaxy of a (001)-oriented Sm-PMN-PT thin film on a Si substrate by introducing a PZT-based seed layer and separate deposition technique enhancing a homogeneous distribution of the composition in the film. A ~2-μm-thick Sm-PMN-PT epitaxial thin film was successfully fabricated on Si by this unique method in this study. We believe that this achievement is a great step to create a giant piezoelectric transducer thin film for high-performance piezoelectric MEMS actuators.
In this study, we succeeded the reproducible sputter epitaxy of a (001)-oriented Sm-PMN-PT thin film on a Si substrate by introducing a PZT-based seed layer and separate deposition technique enhancing a homogeneous distribution of the composition in the film. A ~2-μm-thick Sm-PMN-PT epitaxial thin film was successfully fabricated on Si by this unique method in this study. We believe that this achievement is a great step to create a giant piezoelectric transducer thin film for high-performance piezoelectric MEMS actuators.