[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-13] Anisotropy of electric characteristics in a-Ga₂O₃

〇Ryo Moriya¹, Shohei Aoyama¹, Junjiroh Kikawa¹, Takashi Shinohe², Isao Takahashi², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

Keywords:gallium oxide, oxide semiconductor, electric characteristic

Ota et al. reported that the electrical properties are different between c-face and m-face in α-Ga₂O₃. On the other hand, the anisotropy is denied in the first-principles calculation. Firstly, Sn doped c-face and m-face α-Ga₂O₃ films were evaluated the in-plane anisotropy of electrical characteristics. Secondly, we evaluated m-face samples with different Sn concentration because the m-face sample showed the anisotropy in spite of the c-face sample denoted the isotropic. This result suggests that Sn contributes to the anisotropy.