[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-14] TEM Observation of Sn-doped m-plane α-Ga₂O₃

〇Hiroiki Hayakawa¹, Junjiroh Kikawa¹, Takashi Shinohe², Isao Takahashi², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

Keywords:Oxide Semiconductor, Gallium Oxide, TEM

α-Ga₂O₃ is expected to apply to next-generation power devices thanks to its wide band-gap 5.3eV and establishment of growth technic such as the mist-CVD method. Tottori university reported α-Ga₂O₃ has different electrical characteristics in c-plane and m-plane. It is speculated that this behavior is due to crystal defects. For this reason, we evaluate crystal defects especially dislocation in Sn-doped m-plane α-Ga₂O₃ using TEM observation. We will report the relationship between dislocation and Sn concentration.