[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-19] Epitaxial growth of ε-Ga₂O₃ thin films on β-Ga₂O₃(-201) substrates by mist CVD method

〇Yuki Kajita¹, Hiroyuki Nishinaka¹, Daisuke Tahara¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Keywords:mist CVD method, wide bandgap semiconductor, gallium oxide