[15a-PB1-1~20] 6.4 Thin films and New materials

▲ [15a-PB1-7] Effect of MoS₂(00l)/MoO₂(0kl), (h00) crystal plane orientation of horizontal and vertical sheets on thermoelectric properties of MoS₂/MoO₂ hierarchical thin film

〇(D)Abinaya Rengarajan^1,2, Harish Santhanakrishnan^1,2, Archana Jayaram², Navaneethan Mani², Hayakawa Yasuhiro^1,2, Shimomura Masaru¹ (1.Shizuoka university, 2.SRM IST)

Keywords:Thermoelectricity, nanosheets, MoS2/MoO2

We report thermoelectric properties of chemical vapor deposition (CVD) based growth of 2D MoS₂ nanostructures and its thermoelectric behavior. XRD pattern confirms the formation of MoS₂/MoO₂ hierarchical thin film with crystal plane orientations MoS₂ (00l) and MoO₂ (0kl) and (h00). The Hall measurement suggest that fabricated film is p-type carrier concentration and the carrier concentration is on the order of 10¹⁶ cm^-3 with carrier mobility of 11.7 cm²V^-1s^-1. Vertical growth of MoS₂ is achieved by large supersaturation of S: MoO₃ ratio using large growth time of 30 min. Mechanistic understanding of MoS₂ growth and alignment has been developed with the aid of FESEM observation. The gradual growth of vertical nanosheets, evoluted from horizontal nanosheets is noticed. The sheet thickness is increased by overgrowth of MoS₂ on vertical nanosheets and very smooth surfaced nanosheets also observed. But anchoring of MoO₂ particles over MoS₂ nanosheets along with step-like layered nanosheets has been obtained. The possible mechanism is shown and anchoring of MoO₂ particles on MoS₂ sheets are demonstrated.