[15a-PB3-1~12] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [15a-PB3-1] Investigation the solid phase crystallization kinetics at the high-temperature region by annealing amorphous silicon using micro-thermal-plasma jet

〇(D)Nguyen ThiKhanh Hoa¹、Yuri Mizukawa¹、Hiroaki Hanafusa¹、Seiichiro Higashi¹ (1.Hiroshima University)

キーワード：solid phase crystallization, temperature, micro-thermal-plasma-jet

This research presents a new method to directly observe the transient evolution of amorphous silicon (a-Si) temperature and the phase transformation during micro-thermal-plasma-jet irradiation. Using the time-resolved reflectivity analysis, nucleation temperature and characteristic crystallization time was determined. When the heating rate increases from 4.45 x 10^5 to 2.28 x 10^6 K/s, the nucleation temperature increases from 985 to 1071^oC. The characteristic crystallization time decreases from 75 to 20 µs with an increasing heating rate. Crystallization time as function of temperature corresponds to activation energy of 2.9 eV. This energy relates to both nucleation and growth process.