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[15p-A201-14] Consideration on the mechanisms of defect formation in oxides by the thermal oxidations in O2 or H2O ambient including a small amount of CO
Keywords:SiC, thermal oxidation, MOS capacitor
We investigated the effect of CO during thermal oxidation of Si when fabricating MOS capacitors. P-type Si(100) substrates were annealed in 3 different ambients, and CO was added to those ambients separately. MOS capacitors were fabricated, and from the results of electrical properties measurements, increase of hysteresis, signal of inversion region and shift of flatband voltage were observed, indicating the increase of interface/near-interface trap as well as fixed charges in oxide films. This result indicates that CO, released during SiC thermal oxidation, may affect SiC MOS characteristics and the effect must be controlled properly.