[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-15] Analysis of Interface Trap Generation during Negative Bias Stress in SiC MOSFETs by On-the-fly Charge Pumping Method

〇Dai Okamoto¹, Mitsuru Sometani², Hiroki Sakata¹, Xufang Zhang¹, Yuta Matsuya¹, Tetsuo Hatakeyama³, Mitsuo Okamoto², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.U. Tsukuba, 2.AIST, 3.Toyama Pref. Univ.)

Keywords:SiC, interface