[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-2] First-Principles Study of Nitrogen Annealed SiC MOS structure

〇Mitsuharu Uemoto¹, Naoki Komatsu¹, Tomoya Ono¹ (1.Kobe Univ.)

Keywords:SiC, First principles

In SiC/SiO₂ MOS-FET, it is well known that channel mobility is reduced due to the presence of interface states; the nitridation annealing process is sometimes utilized to recover. In this work, we investigate the SiC supercell structure having the nitrogen implantation and silicon-vacancy from the calculation of density functional theory. we obtain the formation energies.