1:15 PM - 1:30 PM
[15p-A201-2] First-Principles Study of Nitrogen Annealed SiC MOS structure
Keywords:SiC, First principles
In SiC/SiO2 MOS-FET, it is well known that channel mobility is reduced due to the presence of interface states; the nitridation annealing process is sometimes utilized to recover. In this work, we investigate the SiC supercell structure having the nitrogen implantation and silicon-vacancy from the calculation of density functional theory. we obtain the formation energies.