[15p-A302-1~12] 15.4 III-V-group nitride crystals

[15p-A302-11] [Highlight]Ultraviolet-B laser diode with composition-graded p-AlGaN
on lattice-relaxed Al_0.6Ga_0.4N with sapphire substrate

〇Kosuke Sato^1,2, Shinji Yasue², Kazuki Yamada², Shunya Tanaka², Tomoya Omori², Sayaka Ishizuka², Shohei Teramura², Yuya Ogino², Sho Iwayama^2,3, Hideto Miyake³, Motoaki Iwaya², Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki^2,4 (1.Asahi-Kasei, 2.Meijo Univ., 3.Mie Univ., 4.Nagoya Univ.)

Keywords:nitride, laser diode, ultraviolet

UVB-LD on sapphire substrate was realized using lattice-relaxed n-Al_0.6Ga_0.4N underlying layer and III-composition-graded p-AlGaN cladding layer previously developed by our group. The gain-guided LD with resonator length of 300 μm shows threshold current of 0.90 A (current density of 67 kA/cm²), voltage of 27.8V and wavelength of 298 nm with multimodal laser spectrum.