Cathodoluminescence study of Si-doped AlN substrates grown by HVPE on PVT-AlN

Shigefusa Chichibu; Kohei Shima; Kazunobu Kojima; Baxter Moody; Seiji Mita; Ramon Collazo; Zlatko Sitar; Yoshinao Kumagai; Akira Uedono

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15p-A302-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 15, 2020 1:45 PM - 5:00 PM A302 (6-302)

Narihito Okada(Yamaguchi Univ.), Hideaki Murotani(Tokuyama College)

2:30 PM - 2:45 PM

[15p-A302-4] Cathodoluminescence study of Si-doped AlN substrates grown by HVPE on PVT-AlN

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Baxter Moody², Seiji Mita², Ramon Collazo³, Zlatko Sitar^2,3, Yoshinao Kumagai⁴, Akira Uedono⁵ (1.Tohoku Univ., 2.Adroit Materials, 3.NC State Univ., 4.TUAT, 5.Univ. of Tsukuba)

Keywords:Nitride Semiconductors, Cathodoluminescence study, AlN

Cathodoluminescence spectra of Si-doped AlN substrates grown by HVPE on a PVT-AlN crystal will be shown to clarify the influences of Al vacancies on the emission properties.