2020年第67回応用物理学会春季学術講演会

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一般セッション(口頭講演)

17 ナノカーボン » 17.1 カーボンナノチューブ,他のナノカーボン材料

[15p-A403-1~6] 17.1 カーボンナノチューブ,他のナノカーボン材料

2020年3月15日(日) 13:15 〜 14:45 A403 (6-403)

大矢 剛嗣(横国大)

14:30 〜 14:45

[15p-A403-6] Dielectric screening effects on photoluminescence of carbon nanotubes on hexagonal boron nitride

Fang Nan1、Otsuka Keigo1、Taniguchi Takashi2、Watanabe Kenji2、Nagashio Kosuke3、Kato Yuichiro1 (1.RIKEN、2.NIMS、3.Tokyo Univ.)

キーワード:carbon nanotubes、hexagonal boron nitride、photoluminescence

Hexagonal boron nitride (h-BN), a two-dimensional (2D) material, is atomically flat with low defect density, which is widely used to support other 2D materials. We expect that the advantages of h-BN can also be utilized in mixed dimensional heterostructures, and single-walled carbon nanotubes (CNTs) would provide a unique opportunity in this context. The one-dimensional nature of CNTs results in enhanced Coulomb interactions, giving rise to tightly bound excitons that show photoluminescence (PL) at room temperature. CNTs directly attached on solid-state substrates such as SiO2/Si, however, suffers from the strong substrate quenching effect. By using h-BN as a substrate, the quenching effect is expected to be suppressed. Moreover, excitons in CNTs are sensitive to the dielectric environment, and intimate contact with the h-BN could result in large modifications in excitonic energies.