[15p-B410-1~11] 3.13 Semiconductor optical devices

[15p-B410-5] 1.06 μm wavelength band InAs and InGaAs QD lasers

〇JINKWAN KWOEN¹, MASAHIRO KAKUDA¹, WATANABE KATSUYUKI¹, YASUHIKO ARAKAWA¹ (1.Univ. Tokyo)

Keywords:Quantum Dot, Molecular Beam Epitaxy, Quantum Dot Laser

The 1.06 μm band is widely used for current laser processing, and semiconductor lasers are expected to be used. Among them, quantum dot lasers have attracted attention as lasers for next-generation processing because of their high efficiency and excellent temperature characteristics. In this report, we report 1.06 μm-band InGaAs / GaAs and InAs / GaAs quantum dot lasers, and compare and evaluate their characteristics.