[15p-B508-1~7] 3.16 Optics and Photonics English Session

▲ [15p-B508-6] Investigation of bonding interface and strain characteristics in surface activated
bonding assisted by Si-nano film

〇Weicheng Fang¹、Naoki Takahashi¹、Yoshitaka Ohiso¹、Tomohiro Amemiya^1,2、Nobuhiko Nishiyama^1,2 (1.Tokyo Tech、2.IIR)

キーワード：Surface activated room temperature bonding

Surface activated bonding (SAB) based on fast atom beam (FAB) was proposed as a promising hybrid integration method, which can achieve bonded wafer at room temperature without any annealing. Recently, Si-nano film assisted SAB was proposed for SiO2-SiO2 bonding, and such material is hard to bond using the common SAB. And we have reported the strong bonding strength and large bonding area in InP/SiO2-Si bonded wafer using the Si-nano film assisted SAB. In this report, bonding interface is observed by TEM and EDX, and strain characteristics of MQWs before and after bonding is investigated using XRD and photoluminescence (PL).