[15p-D311-1~8] 6.3 Oxide electronics

[15p-D311-7] Tensile strain dependence of electronic structures of LaNiO₃ thin film by using hard X-ray photoemission spectroscopy

〇(P)Kohei Yamagami¹, Keisuke Ikeda¹, Yujun Zhang^1,2, Akira Yasui³, Yasumasa Takagi³, Takayoshi Katase⁴, Toshio Kamiya⁴, Hiroki Wadati^1,2 (1.ISSP Univ. of Tokyo, 2.Univ. of Hyogo, 3.JASRI, 4.Tokyo Inst. of Tech.)

Keywords:Nickelate, Thin film, Photoemission spectroscopy

The electronic states at the vicinity of Fermi level of strongly correlated electron nickelate thin films depend on the tensile strain of substrate, which leads to the changing of the transition temperature for electronic properties. Therefore, it is fundamentaly important to understand the electronic state. We report the hard X-ray photoemission spectroscopy for LaNiO₃ thin films in order to invenstigate the tensile strain dependence of the electronic states, and successfully find that the electronic states near the Fermi level strongly depend on the tensile strain.