[12a-S302-1~7] 10.3 Spin devices, magnetic memories and storages

9:15 AM - 9:30 AM

▼ [12a-S302-2] Time-averaged response of stochastic magnetic tunnel junctions to field and current

〇(M1)Keito Kobayashi^1,2, William Borders^1,2, Shun Kanai^1,3,4,5, Keisuke Hayakawa^1,2, Hideo Ohno^1,2,4,5,6,7, Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.CIES, Tohoku Univ.)

9:45 AM - 10:00 AM

▲ [12a-S302-4] Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

〇(M1)Keito Kobayashi^1,2, Keisuke Hayakawa^1,2, William Borders^1,2, Shun Kanai^1,3,4,5, Junta Igarashi^1,2, Hideo Ohno^1,2,4,5,6,7, Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.CIES, Tohoku Univ.)