[12a-S302-1~7] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

09:15 〜 09:30

▼ [12a-S302-2] Time-averaged response of stochastic magnetic tunnel junctions to field and current

〇(M1)Keito Kobayashi^1,2、William Borders^1,2、Shun Kanai^1,3,4,5、Keisuke Hayakawa^1,2、Hideo Ohno^1,2,4,5,6,7、Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.、2.Graduate School of Engineering, Tohoku Univ.、3.CSRN, Tohoku Univ.、4.DEFS, Tohoku Univ.、5.CSIS, Tohoku Univ.、6.WPI-AIMR, Tohoku Univ.、7.CIES, Tohoku Univ.)

09:45 〜 10:00

▲ [12a-S302-4] Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

〇(M1)Keito Kobayashi^1,2、Keisuke Hayakawa^1,2、William Borders^1,2、Shun Kanai^1,3,4,5、Junta Igarashi^1,2、Hideo Ohno^1,2,4,5,6,7、Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.、2.Graduate School of Engineering, Tohoku Univ.、3.CSRN, Tohoku Univ.、4.DEFS, Tohoku Univ.、5.CSIS, Tohoku Univ.、6.WPI-AIMR, Tohoku Univ.、7.CIES, Tohoku Univ.)