16:30 〜 16:45 ▼ [10p-N204-11] Random telegraph noise in Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layer 〇(D)Jooyoung Pyo1、Akio Ihara1、Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technology)