Hidetoshi Mizobata

→ Search for Hidetoshi Mizobata in Google Scholar

Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:30 PM - 5:15 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM

[12p-N305-5] Electrical Properties of SiO₂/GaN MOS Capacitors Fabricated on Mg-Implanted GaN Activated by Ultra-High-Pressure Annealing

Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Hideki Sakurai², Tetsu Kachi³, Akitaka Yoshigoe⁴, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC ATI, 3.Nagoya Univ. IMaSS, 4.JAEA)

2:45 PM - 3:00 PM

[12p-N305-6] Electrical Properties of P-Channel GaN MOSFETs Fabricated by Mg-implantation and Ultra-High-Pressure Annealing

Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Hideki Sakurai², Tetsu Kachi³, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC ATI, 3.Nagoya Univ. IMaSS)

▲