Session information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10a-N202-1~10] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 9:30 AM - 12:00 PM N202 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[10a-N202-1] [Young Scientist Presentation Award Speech] Investigation of the physical origin affecting the electrical properties of solid-phase crystallized Ge thin films

〇Toshifumi Imajo^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

9:45 AM - 10:00 AM

△ [10a-N202-2] First demonstration of photoresponsivity in a polycrystalline Ge-based thin film

〇Takuto Mizoguchi¹, Kenta Moto², Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.Kyushu Univ.)

10:00 AM - 10:15 AM

△ [10a-N202-3] Impact of Light-absorbing Layer on Laser-induced Liquid-phase Crystallization of GeSn Wires on Quartz Substrate

〇Naoto Tabuchi¹, Mizuki Kuniyoshi², Takuji Hosoi¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Graduate School of Engineering, Osaka Univ., 2.ULVAC, Inc.)

10:15 AM - 10:30 AM

[10a-N202-4] Mg induced lateral crystallization of amorphous Ge on SiO₂

〇Towa Hirai¹, Rikuto Abe¹, Akira Honda¹, Atsuki Morimoto¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT(KOSEN),Kumamoto College)

10:30 AM - 10:45 AM

[10a-N202-5] Low temperature Sn induced lateral crystallization for amorphous Ge on SiO₂

〇Kaisei Wakishima¹, Daichi Koriyama¹, Kento Kiyofuji¹, Ryoki Ryu¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT(KOSEN) Kumamoto College)

10:45 AM - 11:00 AM

[10a-N202-6] Ni-induced lateral crystallization of amorphous Ge(Sn) thin films

〇Takamitsu Ishiyama¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:00 AM - 11:15 AM

[10a-N202-7] Improved Mobility of Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge / Insulator by adding a-Si cap

〇Ryutaro Hara¹, Masanori Chiyozono¹, Kenta Moto^2,3, Keisuke Yamamoto², Taizoh Sadoh¹ (1.Kyushu Univ. ISEE, 2.Kyushu Univ. IGSES, 3.JSPS Research Fellow)

11:15 AM - 11:30 AM

[10a-N202-8] Influence of Sn concentration on solid-phase crystallized GeSn thin-film transistors

〇Kenta Moto^1,2, Keisuke Yamamoto¹, Toshifumi Imajo^2,3, Takashi Suemasu³, Hiroshi Nakashima¹, Kaoru Toko³ (1.Kyushu Univ., 2.JSPS Res. Fellow, 3.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [10a-N202-9] High photoresponsivity in grain-size-controlled GaAs layers formed on glass using Ge seed layers

〇Takeshi Nishida^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

11:45 AM - 12:00 PM

[10a-N202-10] In-Situ Observation and Characterization of SiGe Alloyed Films
Formed by Pre-Alloyed Pastes on Si Substrate

〇Keisuke Fukuda¹, Satoru Miyamoto¹, Masahiro Nakahara^1,2, Shota Suzuki^2,3, Marwan Dhamrin^2,3, Kensaku Maeda⁴, Kozo Fujiwara⁴, Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Aluminum K.K., 3.Osaka Univ., 4.IMR, Tohoku Univ.)

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