Session information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 9:00 AM - 11:45 AM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Takuto Kojima(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[10a-N203-1] Investigation of Constitutional Supercooling during Cz Silicon Growth by Numerical Modeling

〇(D)Yuji Mukaiyama^1,2, Vladimir Artemiev³, Vladimir Kalaev³, Koji Sueoka⁴ (1.Graduate School of Okayama Pref. Univ., 2.STR Japan K.K., 3.STR Group, Inc., 4.Okayama Pref. Univ.)

9:15 AM - 9:30 AM

[10a-N203-2] First principle spectroscopic calculation for RIXS through Radial part solutions of Electron distribution wavefuncion

〇Jun Inagaki¹ (1.Tamkang University)

9:30 AM - 9:45 AM

△ [10a-N203-3] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (3)

〇(M2)Takuto Ushiro¹, Tatsuya Yokoi², Yusuke Noda³, Eiji Kamiyama³, Masato Ohbitsu¹, Hiroki Nagakura¹, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

9:45 AM - 10:00 AM

△ [10a-N203-4] ANN potential analysis on stability of extended interstitial defects in Si crystal

〇(M2)Masato Ohbitsu¹, Tatsuya Yokoi², Eiji Kamiyama³, Takuto Ushiro¹, Hiroki Nagakura¹, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

10:15 AM - 10:30 AM

[10a-N203-5] Parameter identification for thermal fluid simulation in crystal growth using multi-data

〇Hiroyuki Tanaka¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Graduate School of Info., Nagoya Univ.)

10:30 AM - 10:45 AM

[10a-N203-6] 3D multicrystalline Si modeling by experiments and data scientific methods
and finite element stress analysis

〇Kenta Yamakoshi¹, Kentaro Kutsukake², Takuto Kojima³, Hiroaki Kudo³, Noritaka Usami¹ (1.Grad. Eng. Nagoya Univ., 2.RIKEN AIP, 3.Grad. Info. Nagoya Univ.)

10:45 AM - 11:00 AM

[10a-N203-7] Growth angle dependence of Basal plane dislocation density in a PVT-SiC crystal

〇Koichi Kakimoto¹, Satoshi Nakano¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[10a-N203-8] Evaluation of dislocation in ScAlMgO₄ crystal by transmission X-ray topography

〇Kotaro Ishiji¹, Takashi Fujii^2,3, Tsutomu Araki², Tsuguo Fukuda³ (1.SAGA-LS, 2.Ritsumeikan Univ, 3.Fukuda Crystal Lab)

11:15 AM - 11:30 AM

[10a-N203-9] Phase transitions and crystal structure of BaTiO₃ polyhedra

〇Reiji Yamauchi¹, Sangwook Kim¹, Chikako Moriyoshi¹, Yoshihiro Kuroiwa¹, Ichiro Fujii², Shintaro Ueno², Satoshi Wada² (1.Hiroshima Univ., 2.Univ. of Yamanashi.)

11:30 AM - 11:45 AM

[10a-N203-10] Precise detection of carrier lifetime limited by surface-recombination processes
in GaAs (110) using time-resolved two-photon photoemission spectroscopy

〇Shuhei Ichikawa^1,2, Hidehiro Yasuda^1,2 (1.Research Center for UHVEM, Osaka Univ., 2.Osaka Univ.)

Authenticate

Password Authentication

The password has been informed upon conference registration.
For JSAP members, the password has been also notified in the JSAP newsletter sent on June 10.

Please log in with your participant account.
» Participant Log In

▲