Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-N101-1~9] 15.4 III-V-group nitride crystals

Sat. Sep 11, 2021 9:00 AM - 11:30 AM N101 (Oral)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N101-1] Polarity inversion of GaN and its direct growth on sapphire substrate by hydride vapor phase epitaxy

〇Ryusei Misaku¹, Shunsuke Tanigawa¹, Satoshi Kurai¹, Narihito Okada¹, Youichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci.&Tec. for Innov., Yamaguchi Univ.)

9:15 AM - 9:30 AM

[11a-N101-2] [Highlight]Marked reduction of electron trap concentrations in HVPE-grown GaN layers

〇Takeshi Kimura¹, Taiichiro Konno¹, Shota Kaneki¹, Fujikura Hajime¹ (1.SCIOCS Co. Ltd.)

9:30 AM - 9:45 AM

[11a-N101-3] Dislocation structure induced by Vickers indentation on HVPE-GaN(0001) substrate

〇Yukari Ishikawa¹, Daisaku Yokoe¹, Yoshihiro Sugawara¹, Yongzhao Yao¹ (1.JFCC)

9:45 AM - 10:00 AM

[11a-N101-4] HVPE Growth of AlN on Stripe Patterned AlN Templates

〇Hayato Oka¹, Ryuto Okunada¹, Shiyu Xiao², Kanako Shojiki¹, Kenjiro Uesugi^2,3, Shigeyuki Kuboya², Takao Nakamura^3,4, Hideto Miyake^1,3 (1.Grad. Sch. of Eng., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of RIS., Mie Univ., 4.IIS, The Univ. of Tokyo)

10:15 AM - 10:30 AM

[11a-N101-5] [Young Scientist Presentation Award Speech] Electrical properties and structural defects of p-type GaN layers with various Mg concentration grown by HVPE

〇Kazuki Ohnishi¹, Yuki Amano¹, Naoki Fujimoto², Shugo Nitta², Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

10:30 AM - 10:45 AM

△ [11a-N101-6] One-to-one evaluation of electrical properties of Schottky contact and micro structure for individual threading dislocations in a free-standing HVPE-GaN substrate

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Shigeyoshi Usami², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

10:45 AM - 11:00 AM

△ [11a-N101-7] Temperature dependence of electrical characteristics of Schottky contact formed at individual threading dislocations in free-standing HVPE-GaN substrates

〇(M1)Toshikazu Sato¹, Takeaki Hamachi¹, Tetuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Shigeyoshi Usami², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

11:00 AM - 11:15 AM

△ [11a-N101-8] High-rate growth of the OVPE-GaN crystal by the suppression of polycrystal formation at a high temperature, 1300^oC

〇Ayumu Shimizu¹, Shigeyoshi Usami¹, Masahiro Kamiyama¹, Masayuki Imanishi¹, Mihoko Maruyama¹, Masashi Yoshimura², Masahiko Hata³, Masashi Isemura⁴, Yusuke Mori¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.ILE, Osaka Univ., 3.Itochu Plastics Inc., 4.Sosho-Ohshin Inc.)

11:15 AM - 11:30 AM

△ [11a-N101-9] Color reduction and electrical characterization of OVPE-GaN substrates for laser slicing

〇Hiroaki Mifune¹, Shigeyoshi Usami¹, Masahiro Kamiyama¹, Masayuki Imanishi¹, Mihoko Maruyama¹, Masashi Yoshimura², Tomoaki Sumi³, Junichi Takino³, Yoshio Okayama³, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.ILE, Osaka Univ., 3.Panasonic Corporation, 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)

Session information

[11a-N101-1~9] 15.4 III-V-group nitride crystals

[11a-N101-1] Polarity inversion of GaN and its direct growth on sapphire substrate by hydride vapor phase epitaxy

[11a-N101-2] [Highlight]Marked reduction of electron trap concentrations in HVPE-grown GaN layers

[11a-N101-3] Dislocation structure induced by Vickers indentation on HVPE-GaN(0001) substrate

[11a-N101-4] HVPE Growth of AlN on Stripe Patterned AlN Templates

[11a-N101-5] [Young Scientist Presentation Award Speech] Electrical properties and structural defects of p-type GaN layers with various Mg concentration grown by HVPE

△ [11a-N101-6] One-to-one evaluation of electrical properties of Schottky contact and micro structure for individual threading dislocations in a free-standing HVPE-GaN substrate

△ [11a-N101-7] Temperature dependence of electrical characteristics of Schottky contact formed at individual threading dislocations in free-standing HVPE-GaN substrates

△ [11a-N101-8] High-rate growth of the OVPE-GaN crystal by the suppression of polycrystal formation at a high temperature, 1300^oC

△ [11a-N101-9] Color reduction and electrical characterization of OVPE-GaN substrates for laser slicing

Authenticate

Session information

[11a-N101-1~9] 15.4 III-V-group nitride crystals

[11a-N101-1] Polarity inversion of GaN and its direct growth on sapphire substrate by hydride vapor phase epitaxy

[11a-N101-2] [Highlight]Marked reduction of electron trap concentrations in HVPE-grown GaN layers

[11a-N101-3] Dislocation structure induced by Vickers indentation on HVPE-GaN(0001) substrate

[11a-N101-4] HVPE Growth of AlN on Stripe Patterned AlN Templates

[11a-N101-5] [Young Scientist Presentation Award Speech] Electrical properties and structural defects of p-type GaN layers with various Mg concentration grown by HVPE

△ [11a-N101-6] One-to-one evaluation of electrical properties of Schottky contact and micro structure for individual threading dislocations in a free-standing HVPE-GaN substrate

△ [11a-N101-7] Temperature dependence of electrical characteristics of Schottky contact formed at individual threading dislocations in free-standing HVPE-GaN substrates

△ [11a-N101-8] High-rate growth of the OVPE-GaN crystal by the suppression of polycrystal formation at a high temperature, 1300oC

△ [11a-N101-9] Color reduction and electrical characterization of OVPE-GaN substrates for laser slicing

Authenticate

△ [11a-N101-8] High-rate growth of the OVPE-GaN crystal by the suppression of polycrystal formation at a high temperature, 1300^oC