[10a-N101-1~7] 15.4 III-V-group nitride crystals

[10a-N101-1] Influence of Lattice Distortion on the Effective Bandgaps of InN/AlN Superlattices

〇(M2)Kouhei Basaki¹, Akito Korei¹, Takahiro Kawamura¹, Toru Akiyama¹, Yoshihiro Kangawa² (1.Mie Univ., 2.RIAM, Kyushu Univ.)

Keywords:Superlattice, Strain, Bandgap

The bandgaps of AlInN mixed crystals and InN/AlN superlattices, composed of AlN and InN which are nitride semiconductors, can change depending on their composition and structure. In addition, the bandgap is also affected by lattice strain, so it is necessary to examine the relationship between the strain and the bandgap in detail. Therefore, in this study, we analyzed the band structure of the InN/AlN superlattices using first-principles calculations and investigated the effect of lattice strain on the bandgap.