[10a-N101-1~7] 15.4 III-V-group nitride crystals

△ [10a-N101-6] Microstructure analysis for thick AlN films grown on AlN templates with cone-type nano patterned sapphire substrates

〇Yudai Nakanishi¹, Nozomi Yamamoto¹, Takeaki Hamachi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Shiyu Xiao³, Hideto Miyake^4,5, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI, 3.SPORR, 4.Grad. Sch. RIS., Mie Univ., 5.Grad. Sch. Eng., Mie Univ.)

Keywords:nitride semiconductor, aluminum nitride, DUVLED

In the development of deep ultraviolet LED, various technologies have been proposed to improve the luminous efficiency. In this study, transmission electron microscopy (TEM) and nano-beam XRD (nanoXRD) were used to evaluate thick AlN film which is produced by combining cone-shaped nano-patterned sapphire substrates (NPSS) with face-to-face annealing (FFA) sputter-deposited AlN (FFA Sp AlN) and hydride vapor phase epitaxy (HVPE). The crystal structure near the interface between NPSS and AlN was analyzed in detail using transmission electron microscopy (TEM) and nano-beam XRD (nanoXRD).