[10a-N101-1~7] 15.4 III-V族窒化物結晶

▼ [10a-N101-7] Analysis of Crystal Structure Associated with Dislocation Gathering
in Na-flux GaN by Nanobeam X-ray Diffraction

〇Zhendong WU¹、Yudai Nakanishi¹、Yusuke Hayashi¹、Tetsuya Tohei¹、Masayuki Imanishi²、Yusuke Mori²、Yasuhiko Imai³、Kazushi Sumitani³、Shigeru Kimura³、Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ.、2.Grad. Sch. Eng., Osaka Univ.、3.JASRI)

キーワード：Na-flux GaN, nanoXRD, dislocation

Nanobeam X-ray diffraction can obtain quantitative spatial distribution of diffraction angles and lattice constants to investigate structural characteristics of Na-flux GaN grown on multi point seed template. In this work, clear gathering of dislocation is observed from the cross-sectional area located around triple points of coalescence from three pyramids by MPPL, which is believed to be responsible for the low dislocation density in the sample. Correlated nanoXRD measurement near the dislocation gathering area revealed the role of coalescence in modifying crystal structure and detailed investigation is needed to understand the dislocation gathering behavior during coalescence.