11:30 AM - 12:00 PM
[10a-N102-6] Numerical study on growth of mixed semiconductor alloys on board the International Space Station (ISS)
Keywords:International Space Station, mixed semiconductor, numerical study
The role of numerical investigation on the InGaSb mixed crystal semiconductor crystal growth experiment on board the International Space Station conducted will be presented. In particular, the interpretation of the ground preliminary experiment results, the setting of space experiment conditions such as the heating rate, and estimation of the diffusion rate using the experimental results will be described.