10:30 AM - 10:45 AM
[10a-N104-6] Annealing method and ion implantation for nm-scale impurity region for photovoltaics
Keywords:photovoltaics, ion implantation, annealing
A method to form nm scale impurity(dopant) region in Silicon Crystal by special ion implantation is suggested. As for the light absorption by such "Region", the energy of the photon can be absorbed only in the case of resonance condition.
This light absorption in resonance condition will be the light absorption of the high efficiency and basically without the loss.
However, as an obstacle to form these Regions in the light absorption layer of solar cell, there is the diffusion phenomenon of dopant in crystalline silicon. In particular, as a dopant atom, phosphorus has large diffusivity.
In the presentation this time, we would like to focus this diffusion phenomenon after this special ion implantation and discuss the the annealing method to maintain the phosphorus distribution in the Region.
This light absorption in resonance condition will be the light absorption of the high efficiency and basically without the loss.
However, as an obstacle to form these Regions in the light absorption layer of solar cell, there is the diffusion phenomenon of dopant in crystalline silicon. In particular, as a dopant atom, phosphorus has large diffusivity.
In the presentation this time, we would like to focus this diffusion phenomenon after this special ion implantation and discuss the the annealing method to maintain the phosphorus distribution in the Region.