[10a-N104-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[10a-N104-8] Performance improvement of sextuple-junction amorphous Si solar cells by the micro-crystallization of doped layers

〇Hiroshi Noge¹, Yuki Asano¹, Makoto Konagai¹, Ryousuke Ishikawa¹ (1.Tokyo City Univ.)

Keywords:amorphous Si solar cell, sextuple-junction solar cell, micro-crystal Si

We are developing bifacial multi-junction amorphous Si solar cells generating over 3.5 V under 1000 lux indoor illumination as an energy-harvesting source for IoT devices. When the thickness or doping density in the doped layers are decreased, the parasitic photo absorption is suppressed, on the other hand, the open circuit voltage is degraded by the depletion. To overcome this problem, we are making the micro-crystallization of doped layers in sextuple-junction solar cells. We have confirmed the crystallization of n-type layers deposited by PE-CVD at 120 C, by increasing the hydrogen dilution ratio from 30 to 70.