Relative intensity noise properties of a diode-pumped Cr:ZnS femtosecond oscillator

Xiangbao Bu; Daiki Okazaki; Satoshi Ashihara

Presentation information

Oral presentation

3 Optics and Photonics » 3.6 Ultrashort-pulse and high-intensity lasers

[10a-N107-1~12] 3.6 Ultrashort-pulse and high-intensity lasers

Fri. Sep 10, 2021 9:00 AM - 12:15 PM N107 (Oral)

Takasumi Tanabe(Keio Univ.), Kana Iwakuni(Univ. Electro-Communications)

11:45 AM - 12:00 PM

▲ [10a-N107-11] Relative intensity noise properties of a diode-pumped Cr:ZnS femtosecond oscillator

〇(P)Xiangbao Bu¹, Daiki Okazaki¹, Satoshi Ashihara¹ (1.IIS, The Univ. of Tokyo)

Keywords:mid-infrared ultrashort pulse

Cr-doped chalcogenides have great potential for ultrashort pulse generation in the mid-infrared wavelength region of 2-3 μm. For many high-precision applications, relative intensity noise properties are crucial. In this work, the relative intensity noise properties between Kerr-lens mode-locking and carbon nanotube mode-locking in a directly diode-pumped Cr:ZnS oscillator are investigated.