The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10a-N202-1~10] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 9:30 AM - 12:00 PM N202 (Oral)

Kentarou Sawano(Tokyo City Univ.)

10:15 AM - 10:30 AM

[10a-N202-4] Mg induced lateral crystallization of amorphous Ge on SiO2

Towa Hirai1, Rikuto Abe1, Akira Honda1, Atsuki Morimoto1, Kenichiro Takakura1, Isao Tsunoda1 (1.NIT(KOSEN),Kumamoto College)

Keywords:semiconductor, crystallinity

We have investigated that Mg induced lateral crystallization of amorphous Ge on SiO2 / Si substrate. The results demonstrated that the Mg induced lateral crystallization of amorphous Ge on insulating substrate was significantly enhanced by using 2 step annealing process. This enhancement was attributed to the ease of Mg atoms diffusion into amorphous Ge region.