We have investigated that low temperature crystallization technique for amorphous Ge on insulating substrate by the effect of 2 step annealing on Sn induced lateral crystallization of amorphous Ge on insulating substrate is investigated. We have investigated that Sn induced lateral crystallization of amorphous Ge on SiO2 / Si substrate. It is found that the annealing temperature to cause the Sn induced lateral crystallization of amorphous Ge is 220 ℃. The results demonstrated that the Mg induced lateral crystallization of amorphous Ge on insulating substrate was significantly enhanced by using 2 step annealing process. This enhancement was attributed to the ease of Mg atoms diffusion into amorphous Ge region.
We have investigated the lateral growth of amorphous Ge using Sn. And we have reported that the lateral growth distance is expanded by using high-energy radiation. This time, I focused on the Sn induced lateral growth temperature.
So far, it was known that Sn-induced lateral growth was induced at 220℃, but by using the two step annealing, it was possible to reduce the Sn induced lateral growth start temperature.