[10a-N202-1~10] 15.5 Group IV crystals and alloys

[10a-N202-7] Improved Mobility of Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge / Insulator by adding a-Si cap

〇Ryutaro Hara¹, Masanori Chiyozono¹, Kenta Moto^2,3, Keisuke Yamamoto², Taizoh Sadoh¹ (1.Kyushu Univ. ISEE, 2.Kyushu Univ. IGSES, 3.JSPS Research Fellow)

Keywords:semiconductor

本研究ではSn添加Ge極薄膜の固相成長に与えるa-Siキャップ効果を検討した。