ANN potential analysis on stability of extended interstitial defects in Si crystal

Masato Ohbitsu; Tatsuya Yokoi; Eiji Kamiyama; Takuto Ushiro; Hiroki Nagakura; Yusuke Noda; Koji Sueoka

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 9:00 AM - 11:45 AM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Takuto Kojima(Nagoya Univ.)

9:45 AM - 10:00 AM

△ [10a-N203-4] ANN potential analysis on stability of extended interstitial defects in Si crystal

〇(M2)Masato Ohbitsu¹, Tatsuya Yokoi², Eiji Kamiyama³, Takuto Ushiro¹, Hiroki Nagakura¹, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

Keywords:Machine Learning, extended interstitial defects, first-principles calculation