The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[10a-N221-1~7] 15.1 Bulk crystal growth

Fri. Sep 10, 2021 10:00 AM - 12:00 PM N221 (Oral)

Yuui Yokota(Tohoku Univ.), Satoshi Watauchi(Univ. of Yamanashi)

11:30 AM - 11:45 AM

[10a-N221-6] Coredefect and striation of ScAlMgO4 single crystal growth by CZ technique.

Yuji Shiraishi1, Toki Nanto1, Hiroyuki Ando1, Tuguo Fukuda1, Takashi Fujii1,2, Kotaro Ishiji3, Katsuhiko Inaba4 (1.Fukuda Crystal Lab., 2.Ritsumeikan Univ., 3.Kyushu Synchrotron Light Research Center., 4.Rigaku Corp.)

Keywords:ScAlMgO4, crystal growth, CZ technique

It has been reported that a 2 ″ φ self-supporting GaN substrate using a ScAlMgO4 (SAM) single crystal as a substrate can be produced with a high yield, and it is expected to be applied to GaN power devices. We have reported on 3″ φ diameter, 2 ″ φ dislocation free, and various crystal defects in the crystal. This time, we have investigated the core, striation, and growth conditions by XRT.

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