[10a-N221-1~7] 15.1 Bulk crystal growth

[10a-N221-6] Coredefect and striation of ScAlMgO₄ single crystal growth by CZ technique.

〇Yuji Shiraishi¹, Toki Nanto¹, Hiroyuki Ando¹, Tuguo Fukuda¹, Takashi Fujii^1,2, Kotaro Ishiji³, Katsuhiko Inaba⁴ (1.Fukuda Crystal Lab., 2.Ritsumeikan Univ., 3.Kyushu Synchrotron Light Research Center., 4.Rigaku Corp.)

Keywords:ScAlMgO4, crystal growth, CZ technique

It has been reported that a 2 ″ φ self-supporting GaN substrate using a ScAlMgO₄ (SAM) single crystal as a substrate can be produced with a high yield, and it is expected to be applied to GaN power devices. We have reported on 3″ φ diameter, 2 ″ φ dislocation free, and various crystal defects in the crystal. This time, we have investigated the core, striation, and growth conditions by XRT.