[10a-N305-1~10] CS.8 Code-sharing Session of 4.5 & 17

▲ [10a-N305-8] High mobility and 2D electron gas in aggregates of 1D transition metal chalcogenide atomic wires

〇(D)Hiroshi Shimizu¹, Jiang Pu², Zheng Liu³, Hong En Lim¹, Yusuke Nakanishi¹, Takahiko Endo¹, Kazuhiro Yanagi¹, Taishi Takenobu², Yasumitsu Miyata¹ (1.Tokyo Metropolitan University, 2.Nagoya University, 3.AIST. for National Institute of Advanced Industrial Science and Technology)

Keywords:transition metal chalcogenide, van der Waals materials, Shubnikov de Haas oscillation

One-dimensional (1D) transition metal chalcogenides (TMCs) have attracted much attention lately due to their atomically-thin, wired structures and superior conducting properties. These wires interact via van der Waals forces, aggregating into 1D crystal of different shapes. By manipulating the assembled crystal structure, their physical properties can be possibly tuned. Indeed, metal-semiconductor transition and a crossover from 1D to 3D electronic states have been reported for single- to few-wires of WTe. However, relevant studies remain limited. Recently, we had achieved a scalable growth of long, highly-crystalline 2D and 3D assemblies of WTe crystals using chemical vapor deposition (CVD). Such aggregates are expected to be an ideal system to realize a tunable wire-based electronic system. Using the high quality and long WTe prepared this way, herein we report the 2D electron gas of laterally-assembled WTe atomic wires.