[10p-N101-1~20] 15.4 III-V-group nitride crystals

[10p-N101-1] Effect of point defects on optical properties of GaN

〇(M2)Satoshi Ohata¹, Takahiro Kawamura^1,2, Masayuki Imanishi², Masashi Yoshimura², Yusuke Mori² (1.Mie Univ., 2.Osaka Univ.)

Keywords:Gallium nitride, Point defect, Optical properties

GaN has a large band gap of about 3.4 eV and is originally a colorless and transparent crystal. However, GaN crystals grown by the amonothermal and Oxide Vapor Phase Epitaxy (OVPE) methods contain many defects and impurities, which affect the coloration of the crystals. In order to improve the crystal quality and control the properties, it is important to understand the effect of defects on the material properties. In this study, we analyzed the electronic structure of GaN containing point defects and complex defects using first-principles calculations and investigated the effect of defects on the optical properties of GaN.