[10p-N101-1~20] 15.4 III-V-group nitride crystals

△ [10p-N101-13] Fabrication and optical characterization of Eu-doped GaN-based high-Q H3 photonic crystal cavities

〇Takenori Iwaya¹, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Masato Murakami¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Keywords:Photonic crystal cavity, GaN:Eu

For future applications of GaN-based red light emitting devices, we introduce photonic crystal cavities into Eu-doped GaN in order to improve the luminescence efficiency of LED and to achieve laser diodes. However, the Q-factors are greatly degraded due to the experimentally introduced disorder during the fabrication stages. Based on simulations, we previously reported that an H3-type cavity can realize high-Q-factors even with disorders. In this study, we fabricated an H3 cavity and observed a high Q-factor of 7500, which greatly exceeds the reported Q-factor (<5500) for III-nitride-based photonic crystal cavities in the visible range.