[10p-N101-1~20] 15.4 III-V-group nitride crystals

△ [10p-N101-14] Room-temperature red light emission from Eu-doped GaN nanowires on flexible membranes

〇Takaya Otabara¹, Jun Tatebayashi^1,2, Shunya Hasegawa¹, Shuhei Ichikawa^1,3, Masaaki Ashida⁴, Yasufumi Fujiwara¹ (1.Grad. Sch. Eng. ,Osaka Univ., 2.QIQB, 3.UHVEM, 4.Grad. Sch. Eng. Sci., Osaka Univ.)

Keywords:GaN, rare earth, nanowires

We report on the growth and optical characteristics of GaN:Eu/GaN core-shell nanowires (NWs) by OrganoMetalic Vapar Phase Epitaxy (OMVPE). Red light emission is observed at room-temperature from GaN:Eu/GaN core-shell NWs, whose PL intensity is stronger than that of conventional GaN:Eu films. Furthermore, we closely investigate the mechanism of such enhanced PL intensity from the NWs. In addition, we succeed in transferring the NWs in polydimethylsiloxane flexible membranes and realized red light emission from transferred GaN:Eu NWs.