[10p-N102-1~11] 15.4 III-V-group nitride crystals

[10p-N102-11] Electrical and optical properties of pn-junction of GaN grown on Si(001) substrate

〇(M2)Takeshi Mori¹, Hayato Miyagawa¹, Shun Koshiba¹, Akiyama Hidefumi² (1.Kagawa Univ, 2.ISSP)

Keywords:Semiconductor, Nitride semiconductor

Our group has studied the crystal structures and the physical properties of GaN epitaxially grown on the Si substrate rather than sapphire substrate which is more expensive and less compatible for electronic devices due to the lack of electric conductivity. In this report, we present the electronic rectification properties from IV measurements and the optical properties from PL and EL measurements of pn heterostructure of doped GaN grown on the Si substrate.