[10p-N102-1~11] 15.4 III-V-group nitride crystals

[10p-N102-2] Growth and Characterization of GaInN/GaInN Multiple Quantum Wells by RF-MBE

〇Kaigo Tahara¹, Jumpei Yamada², Tomohiro Yamaguchi¹, Yasushi Nanishi³, Takeyoshi Onuma¹, Tohru Honda¹, Katsumi Kishino² (1.Kogakuin Univ., 2.Sophia Univ., 3.Ritsumeikan Univ.)

Keywords:GaInN, RF-MBE, MQWs

Ga_1-xIn_xN / Ga_1-yIn_yN (x> y) multiple quantum wells (MQWs) were grown and characterized by RF-MBE method for red light emission. The PL measurement at room temperature showed a peak wavelength of 683 nm, and the PL emission with a peak in the red wavelength region was achieved. Based on these results, the structure and optical properties of Ga_1-xIn_xN / Ga_1-yIn_yN MQWs will be comprehensively discussed.