3:30 PM - 3:45 PM
[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future
Keywords:silicon crystal, nitrogen, infrared absorption
Nitrogen makes various complexes with vacancy (V), interstitial (I), C and O. Detection and assignment by IR was difficult due to low concentration for experiment and to complicated configuration for theoretical work. Moreover, the absorption from other complexes must be excluded. Improvement of sensitivity of experiment from 1014 to below 1013/cm3 and accuracy of wavenumber calculation from 80 cm-1 to less than 1% solved most problems. Future: Assignment of known absorption peaks, detection of more STD and IN complexes, and analysis of behavior of V-I-O complexes in growing silicon is expected.