[10p-N204-1~17] 6.5 表面物理・真空

▼ [10p-N204-11] Random telegraph noise in Hf-based MONOS nonvolatile memory with HfO₂ and HfON tunneling layer

〇(D)Jooyoung Pyo¹、Akio Ihara¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Random telegraph noise, MONOS non-volatile memory, Hf-based material

Previously, we have investigated Hf-based metal/oxide/nitride/oxide/silicon (MONOS) non-volatile memories (NVM) with HfON tunneling layer (TL) to decrease the equivalent oxide thickness (EOT) and improve the memory characteristics compared to HfO₂ TL [1]. However, HfON TL shows large density of interface states (D_it) than HfO2 TL [1,2].
In this research, the random telegraph noise (RTN) characteristics were utilized to investigate the interface characteristics of Hf-based MONOS NVM with HfO₂ and HfON TL [3].