[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

△ [10p-N303-10] [Highlight]OMVPE growth and luminescence property of Tb-doped Al_xGa_1-xN

〇Ryota Komai¹, Shuhei Ichikawa^1,2, Hiromasa Hanzawa³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Graduate School of Engineering Science, Osaka Univ.)

Keywords:semicondoctor, photoluminescence, rare-earth

Tb³⁺ shows very sharp luminescence peaks in the green spectral region, originating from the intra-4f shell transition. Besides, the wavelength is ultra-stable against for temperature and current injection levels. However, Tb-doped GaN grown by the organometallic vapor phase epitaxy (OMVPE) method shows very weak Tb emission at room temperature. In this study, we report on extremely clear Tb emission at room temperature from Tb-doped AlGaN layer grown by OMVPE.