[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

△ [10p-N303-9] Fabrication and optical characteristics of GaN:Eu-based microdisk with higher Q factor

〇Teruki Taniguchi¹, Jun Tatebayashi^1,2, Dolf Timmerman¹, Shuhei Ichikawa^1,3, Masaaki Ashida⁴, Yasufumi Fujiwara¹ (1.Grad.Sch.Eng.Osaka Univ., 2.QIQB Osaka Univ., 3.UHVEM Osaka Univ., 4.Grad.Sch.Eng.Sci.Osaka Univ.)

Keywords:semiconductor, Rare Earth

Eu-doped GaN (GaN: Eu) has a sharp emission spectrum and high temperature wavelength stability due to the transition in the 4f shell of Eu, and it is possible to obtain stable red luminescence with GaN-based materials. We have so far focused on the microdisk (MD) microcavity in order to further enhance the Eu luminescence and control its directionality. In this contribution, we report on the fabrication and optical characteristics of the MD structure with a higher Q factor by improving the fabrication process, and characterize the optical characteristics of the fabricated MD microcavity.