[10p-N306-1~18] 17.2 Graphene

[10p-N306-11] Direct precipitation of multilayer graphene using crystallized Ni catalyst
--- Multilayer graphene growth with highly-aligned crystal orientation ----

〇Shigeya Naritsuka¹, Asato Nakashima¹, Tomoaki Murahashi¹, Tatsuya Kashio¹, Takahiro Maruyama¹ (1.Meijo Univ.)

Keywords:graphene, crystallized Ni, direct precipitation method

Graphene is one of the promising materials for developing future industry from its superior electrical, mechanical, and chemical characteristics. We have studied a direct precipitation of graphene to improve the productivity of graphene with avoiding the transfer process problem. The direct precipitation method is very promising but the characteristics of the precipitated graphene are still inferior to those of the CVD-grown graphene. To improve the quality, high temperature growth is favorable but grain boundary is another problem. It is because the carbon atoms easily diffuse through the boundaries of the catalyst even at low temperature, and severely deteriorates the precipitated graphene. Therefore, the crystallization of the catalyst is an important topic in the graphene growth. In the presentation, the crystallization of the Ni catalyst is firstly reported on the sapphire substrate. Then, the crystallized Ni catalyst is used to directly precipitate multilayer graphene.