5:15 PM - 5:30 PM
[10p-N306-15] Origin of vertical hBN/Graphene Heterostructures Growth in CVD
Keywords:graphene, hBN, growth theory
Graphene is 0-gap semiconductor when it is monolayer and metal when it is multilayer, while hBN is insulator and becomes good dielectrics for graphene. Therefore, we can open a new way for the application if we intentionally form heterostructures made of these. We theoretically study the mechanism behind the way to realize such heterostructure formation using the first-principles calculation. In this study, we discuss the mechanism based on the calculations about C dimer adsorption.